general purpose transistors npn silicon 2SC2412KXLT1 sotC 23 maximum ratings rating symbol value unit collector?emitter voltage v ceo 50 v collector?base voltage v cbo 60 v emitter?base voltage v ebo 7.0 v collector current ? continuous i c 150 madc collector power dissipation p c 0.2 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c device marking 2sc2412kql t1 =bq 2sc2412krlt1 =br 2sc2412kslt1 =g1f electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min typ max unit collector?emitter breakdown voltage v (br)ceo 50 ? ? v (i c = 1 ma) emitter?base breakdown voltage v (br)ebo 7??v (i e = 50 a) collector?base breakdown voltage v (br)cbo 60 ? ? v (i c = 50 a) collector cutoff current i cbo ? ? 0.1 a (v cb = 60 v) emitter cutoff current i ebo ? ? 0.1 a (v eb = 7 v) collector-emitter saturation voltage v ce(sat) ? ? 0.4 v (i c / i b = 50 ma / 5m a) dc current transfer ratio h fe 120 ?? 560 ?? (v ce = 6 v, i c = 1ma) transition frequency f t ? 180 ?? mhz (v ce = 12 v, i e = ? 2ma, f =30mhz ) output capacitance c ob ? 2.0 3.5 pf (v cb = 12 v, i e = 0a, f =1mhz ) h fe values are classified as follows: qrs hfe 120~270 180~390 270~560 2 emitter 3 collector 1 base * ? device marking shipping 2sc2412kqlt1 br g1f 3000 tape & reel 3000 tape & reel 3000 tape & reel ordering information 2sc2412krlt1 2sc2412kslt1 bq we declare that the material of product compliance with rohs requirements. 2SC2412KXLT1 2012- willas electronic corp.
0 ?0.2 ?0.4 ?0.6 ?0.8 ?1.0 ?1.2 ?1.4 ?1.6 t a = 100c 25c ? 55c 50 20 10 50 2 1 0.5 0.2 0.1 0 0.4 0.8 1.2 1.6 2.0 t a = 25c 100 80 60 40 20 0 i c , collector current (ma) fig.1 grounded emitter propagation characteristics fig.2 grounded emitter output characteristics( ) fig.3 grounded emitter output characteristics( ) fig.4 dc current gain vs. collector current ( ) fig.5 dc current gain vs. collector current ( ) fig.6 collector-emitter saturation voltage vs. collector current v ce = 6 v v be , base to emitter voltage(v) i c , collector current (ma) v ce , collector to emitter voltage (v) 0 481 21 62 0 10 8 6 4 2 0 i c , collector current (ma) v ce , collector to emitter voltage (v) 500 200 100 50 20 10 h fe , dc current gain i c , collector current (ma) 0.2 0.5 1 2 5 10 20 50 100 200 500 200 100 50 20 10 h fe , dc current gain i c , collector current (ma) 0.5 0.2 0.1 0.05 0.02 0.01 v ce(sat) , collector saturation voltage(v) i c , collector current (ma) 0.50ma 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 2012- willas electronic corp. general purpose transistors 2SC2412KXLT1
fig.8 collector-emitter saturation voltage vs. collector current ( ) v ce(sat) , collector saturation voltage(v) i c , collector current (ma) 0.2 0.5 1 2 5 10 20 50 100 fig.9 gain bandwidth product vs. emitter current 500 200 100 50 f r , transition frequency(mhz) i e , emitter current (ma) ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 fig.10 collector output capacitance vs.collector-base voltage emitter inputcapacitance vs. emitter-base voltage 20 10 5 2 1 c ob , collector output capacitance( pf) c ib , emitter input capacitance (pf) v cb , collector to base voltage (v) v eb , emitter to base voltage (v) 0.2 0.5 1 2 5 10 20 50 fig.7 collector-emitter saturation voltage vs. collector current ( ) 0.5 0.2 0.1 0.05 0.02 0.01 v ce(sat) , collector saturation voltage(v) i c , collector current (ma) 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.2 0.1 0.05 0.02 0.01 fig.11 base-collector time constant vs.emitter current 200 100 50 20 10 c c - r bb , base collector time constant( ps) i e , emitter current (ma) ?0.2 ?0.5 ?1 ?2 ?5 ?10 2012- willas electronic corp. general purpose transistors 2SC2412KXLT1
sot - 23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012- willas electronic corp. general purpose transistors 2SC2412KXLT1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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